NCE3007S mosfet equivalent, nce p-channel enhancement mode power mosfet.
* VDS =-30V,ID =-6.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characte.
General Features
* VDS =-30V,ID =-6.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V
Schematic diagram
The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications.
General Features
* VDS =-30V,ID =-6.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON.
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